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BAV19 PDF预览

BAV19

更新时间: 2024-11-01 06:41:31
品牌 Logo 应用领域
TSC 二极管开关高压
页数 文件大小 规格书
2页 87K
描述
High Voltage Surface Mount Switching Diode

BAV19 技术参数

生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.42
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.3 W
最大重复峰值反向电压:120 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BAV19 数据手册

 浏览型号BAV19的Datasheet PDF文件第2页 
BAV19/BAV20/BAV21  
High Voltage Surface Mount Switching Diode  
DO-35  
RoHS  
Pb  
COMPLIANCE  
Features  
—
—
—
Fast switching speed  
General purpose rectification  
Silicon epitaxial planar construction  
Mechanical Data  
—
—
Case: DO-35  
Leads:Solderableper MIL-STD-202,  
Method 208  
—
—
—
Polarity: Cathode band  
Marking: Type number  
Weight: 0.13 grams (approx.)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage Working Peak  
Reverse Voltage DC Blocking Voltage  
Rectifier Current (Average) Half Wave  
Rectification with Resist Load at Tamb=25OC and  
f > 50Hz  
Symbol  
VRRM  
VR  
BAV19  
120  
100  
BAV20  
200  
150  
BAV21 Units  
250  
200  
V
V
Io  
200  
mA  
Non-Repetitive Peak Forward Surge Current  
@ t=1.0s and Tj=25oC  
1000  
IFSM  
Ptot  
RθJA  
mA  
mW  
K/mW  
OC  
Power Dissipation (Note 1)at Tamb = 25 OC  
Thermal Resistance Junction to Ambient Air  
Operating and Storage Temperature Range  
300  
0.35  
-65 to + 175  
TJ, TSTG  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
1.0  
Units  
V
-
Forward Voltage  
@ IF=100mA  
VF  
Peak Reverse Current  
BAV19 @ VR=100V  
BAV20 @ VR=150V  
BAV21 @ VR=200V  
0.1  
0.1  
0.1  
uA  
uA  
uA  
-
IR  
-
-
Capacitance VR=0, f=1.0MHz  
Reverse Recovery Time (Note 1)  
1.5  
75  
Ctot  
trr  
pF  
nS  
Note: 1. Reverse Recovery Test Conditions: IF=10mA to IRR=1.0mA VR=6.0V, RL=100Ω  
Version: A07  

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