Datasheet > BAS52WT

BAS52WT

更新时间： 2024-11-19 14:48:39

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	180K
描述
肖特基二极管

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中文翻译

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数据手册

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BAS52WT 数据手册

BAS52WT

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• High reverse voltage

• Low forward voltage

Top View

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

200

Peak Forward Surge Current (tp = 8.3 ms)

Peak Forward Surge Current (tp = 100 µs)

Power Dissipation

I_FSM

P_D

500

℃

Junction Temperature

T_J

150

Storage Temperature Range

T_stg

- 40 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

250

Unit

Typical Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

at I_F= 200 mA

0.42

0.53

0.6

V_F

Reverse Current

at V_R= 10 V

at V_R= 45 V

at V_R= 10 V, Tj = 125℃

I_R

µA

200

Total Capacitance

at V_R= 10 V, f = 1 MHz

C_T

1 / 3

Dated: 16/06/2023 Rev : 01

12 3

中文翻译

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