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BAS56BKLEADFREE PDF预览

BAS56BKLEADFREE

更新时间: 2024-11-20 13:05:51
品牌 Logo 应用领域
CENTRAL 整流二极管开关测试光电二极管
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BAS56BKLEADFREE 数据手册

 浏览型号BAS56BKLEADFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
BAS56  
S e m ic o n d u c t o r Co r p .  
DUAL HIGH CURRENT  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BAS56  
type is an ultra-high speed silicon switching  
diode manufactured by the epitaxial planar  
process, in an epoxy molded surface mount  
package with isolated dual diodes, designed  
for high current, high speed switching  
applications.  
Marking code is L51.  
SOT-143 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
V
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
V
I
60  
60  
R
RRM  
F
V
200  
600  
4000  
1000  
350  
mA  
mA  
mA  
mA  
mW  
I
I
I
FRM  
FSM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
J stg  
JA  
-65 to +150  
357  
C
C/W  
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
10  
0.75  
1.00  
1.25  
2.5  
6.0  
50  
1.2  
1.5  
UNITS  
nA  
µA  
µA  
V
I
I
I
V
V
F
V
C
T
t
V =60V  
R
R
R
F
R
o
V =60V, T =150 C  
R
A
V =75V  
R
I =10mA  
F
I =200mA  
V
V
pF  
ns  
pC  
V
F
I =500mA  
F
F
V =0, f=1 MHz  
R
I =I =400mA, R =100, Rec. to 40mA  
rr  
s
FR  
F R  
F
L
Q
V
V
I =10mA, V =5.0V, R =500Ω  
R
L
I =400mA, t =30ns  
F
r
r
I =400mA, t =100ns  
V
FR  
F
60  

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