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BAS581-02V-GS08 PDF预览

BAS581-02V-GS08

更新时间: 2024-11-18 14:47:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 54K
描述
Rectifier Diode, Schottky, 1 Element, 40V V(RRM),

BAS581-02V-GS08 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.37 V最大非重复峰值正向电流:0.2 A
元件数量:1最高工作温度:125 °C
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

BAS581-02V-GS08 数据手册

 浏览型号BAS581-02V-GS08的Datasheet PDF文件第2页浏览型号BAS581-02V-GS08的Datasheet PDF文件第3页浏览型号BAS581-02V-GS08的Datasheet PDF文件第4页 
BAS581-02V  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single  
Features  
• These diodes feature very low turn-on  
voltage and fast switching.  
• Space saving SOD-523 package  
1
e3  
1
2
• Lead (Pb)-free component  
• Component in accordance to  
RoHS 2002/95/EC and WEEE 2002/96/EC  
18554  
2
Mechanical Data  
Case: SOD-523 Plastic case  
Molding Compound Flammability Rating:  
UL 94 V-0  
Terminals: High temperature soldering guaranteed:  
260 °C/10 sec. at terminals  
Weight: approx. 1.6 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Tape and Reel  
BAS581-02V  
BAS581-02V-GS18 or BAS581-02V-GS08  
Z
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VRRM  
Value  
Unit  
V
Repetitive peak reverse  
voltage=Working peak reverse  
voltage  
40  
Forward continuous current  
Surge forward current  
IF  
30  
mA  
mA  
IFSM  
200  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJS  
Value  
100  
Unit  
K/W  
Junction soldering point  
Junction temperature  
Tj  
125  
°C  
°C  
Storage temperature range  
TS  
- 65 to + 150  
Document Number 85516  
Rev. 1.2, 29-Jun-05  
www.vishay.com  
1

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