生命周期: | Obsolete | 包装说明: | R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.29 |
配置: | SEPARATE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1 V |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 2 |
端子数量: | 4 | 最大输出电流: | 0.2 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大反向恢复时间: | 0.006 µs | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAS581-02V | VISHAY |
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Small Signal Schottky Diodes, Single | |
BAS581-02V-GS08 | VISHAY |
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Rectifier Diode, Schottky, 1 Element, 40V V(RRM), | |
BAS581-02V-GS18 | VISHAY |
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DIODE 0.03 A, 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode | |
BAS581-02V-V-G | VISHAY |
获取价格 |
Small Signal Schottky Diode | |
BAS581-02V-V-G_15 | VISHAY |
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Small Signal Schottky Diode | |
BAS581-02V-V-G-08 | VISHAY |
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Small Signal Schottky Diode | |
BAS616 | NXP |
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DIODE SILICON, SIGNAL DIODE, Signal Diode | |
BAS616-T | NXP |
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DIODE SILICON, SIGNAL DIODE, Signal Diode | |
BAS678 | TYSEMI |
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Small plastic SMD package High switching speed: max. 6ns | |
BAS678 | KEXIN |
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High-speed diode |