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BAS56

更新时间: 2024-01-13 09:05:09
品牌 Logo 应用领域
CENTRAL 整流二极管开关测试光电二极管
页数 文件大小 规格书
2页 96K
描述
DUAL HIGH CURRENT SWITCHING DIODE

BAS56 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
最大正向电压 (VF):0.75 V最高工作温度:150 °C
最低工作温度:-65 °C最大功率耗散:0.35 W
最大重复峰值反向电压:60 V最大反向电流:100 µA
最大反向恢复时间:0.006 µs反向测试电压:60 V
子类别:Other Diodes表面贴装:YES
Base Number Matches:1

BAS56 数据手册

 浏览型号BAS56的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
BAS56  
S e m ic o n d u c t o r Co r p .  
DUAL HIGH CURRENT  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BAS56  
type is an ultra-high speed silicon switching  
diode manufactured by the epitaxial planar  
process, in an epoxy molded surface mount  
package with isolated dual diodes, designed  
for high current, high speed switching  
applications.  
Marking code is L51.  
SOT-143 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
V
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
V
I
60  
60  
R
RRM  
F
V
200  
600  
4000  
1000  
350  
mA  
mA  
mA  
mA  
mW  
I
I
I
FRM  
FSM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
J stg  
JA  
-65 to +150  
357  
C
C/W  
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
10  
0.75  
1.00  
1.25  
2.5  
6.0  
50  
1.2  
1.5  
UNITS  
nA  
µA  
µA  
V
I
I
I
V
V
F
V
C
T
t
V =60V  
R
R
R
F
R
o
V =60V, T =150 C  
R
A
V =75V  
R
I =10mA  
F
I =200mA  
V
V
pF  
ns  
pC  
V
F
I =500mA  
F
F
V =0, f=1 MHz  
R
I =I =400mA, R =100, Rec. to 40mA  
rr  
s
FR  
F R  
F
L
Q
V
V
I =10mA, V =5.0V, R =500Ω  
R
L
I =400mA, t =30ns  
F
r
r
I =400mA, t =100ns  
V
FR  
F
60  

BAS56 替代型号

型号 品牌 替代类型 描述 数据表
BAS56/T3 NXP

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