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BAS56_10 PDF预览

BAS56_10

更新时间: 2024-11-18 08:48:27
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 422K
描述
SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES

BAS56_10 数据手册

 浏览型号BAS56_10的Datasheet PDF文件第2页 
BAS56  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, ISOLATED HIGH CURRENT  
SILICON SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BAS56 consists  
of two electrically isolated ultra-high speed silicon  
switching diodes manufactured by the epitaxial planar  
process and packaged in an epoxy molded surface  
mount SOT-143 case. This device is designed for high  
speed switching applications.  
MARKING CODE: L51 or WL5  
SOT-143 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
60  
60  
R
V
V
RRM  
I
200  
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
400  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
10  
UNITS  
nA  
μA  
μA  
V
I
I
I
V =60V  
R
R
R
R
V =60V, T =150°C  
R
A
V =75V  
R
V
V
V
I =10mA  
0.75  
1.0  
F
F
F
F
I =200mA  
V
F
I =500mA  
1.25  
2.5  
V
F
C
V =0, f=1.0MHz  
pF  
ns  
pC  
V
T
R
t
I =I =400mA, I =40mA, R =100Ω  
6.0  
rr  
F
R
rr  
L
Q
I =10mA, V =5.0V, R =500Ω  
50  
s
F
R
L
V
V
I =400mA, t =30ns  
1.2  
FR  
FR  
F
r
I =400mA, t =100ns  
1.5  
V
F
r
R7 (25-August 2010)  

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