Datasheet > BAP64-05

BAP64-05

更新时间： 2024-11-06 06:41:27

品牌	Logo	应用领域
SECOS		二极管
页数	文件大小	规格书
2页	189K
描述
Small Signal General Purpose Pin Diode

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中文翻译

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技术参数
数据手册

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BAP64-05 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.57	Is Samacsys：	N
二极管类型：	PIN DIODE	Base Number Matches：	1

BAP64-05 数据手册

BAP64-05

Small Signal General Purpose Pin Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

Low diode capacitance

Low diode forward resistance

Low series inductance

High voltage, current controlled

RF resistor for RF attenuators and switches

For applications up to 3 GHz

Top View

C B

RF attenuators and switches

PACKAGING INFORMATION

Millimeter

REF.

Weight: 0.0078 g (Approximate)

Min.

Max.

3.04

2.55

1.40

1.15

Min.

Max.

0.18

0.60

2.80

2.10

1.20

0.89

0.09

0.45

0.08

0.177

0.6 REF.

MARKING CODE

1.80

0.30

2.00

0.50

0.89

1.02

MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)

Parameter

Continuous Reverse Voltage

Continuous Forward Current

Power Dissipation

Symbol

Ratings

Unit

V_R

I_F

175

100

°C

P_D

250

Junction, Storage Temperature

T_J, T_STG

150, -65 ~ +150

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Typ.

Parameters

Symbol

Min.

Max.

1.1

Unit

Test Conditions

Forward Voltage

V_F

I_F= 50 mA

V_R= 175 V

V_R= 20 V

Reverse Voltage Leakage Current

Diode Capacitance

I_R

μA

0.52

0.37

0.23

V_R= 0, f = 1 MHz

C_D

V_R= 1 V, f = 1 MHz

0.35

V_R= 20 V, f = 1 MHz

I_F= 0.5 mA, f = 100 MHz

I_F= 1 mA, f = 100 MHz

I_F= 10 mA, f = 100 MHz

I_F= 100 mA, f = 100 MHz

Diode Forward Resistance

r_D

3.8

1.35

0.7

When switched from

I_F= 10 mA to I_R= 6 mA;

R_L= 100 Ω;

Charge Carrier Life Time

Series Inductance

t_L

1.55

1.4

μS

measured at I_R=3mA

L_S

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-Jun-2005 Rev. A

Page 1 of 2

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