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BAP64-05W PDF预览

BAP64-05W

更新时间: 2024-11-05 08:48:11
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金誉半导体 - HTSEMI 二极管
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PIN DIODES

BAP64-05W 数据手册

 浏览型号BAP64-05W的Datasheet PDF文件第2页 
BAP64-05W  
PIN DIODES  
FEATURES  
SOT-323  
z
High voltage, current controlled  
RF resistor for RF attenuators and switches  
Low diode capacitance  
z
z
z
z
z
z
Low diode forward resistance  
Low series inductance  
For applications up to 3 GHz  
RF attenuators and switches  
Marking: 5W  
Maximum Ratings @TA=25  
Parameter  
Symbol  
Unit  
Limits  
Continuous reverse voltage  
Continuous Forward Current  
Power Dissipation  
VR  
IF  
175  
100  
V
mA  
mW  
/W  
PD  
200  
Thermal Resistance Junction to Ambient  
Junction temperature  
RθJA  
Tj  
625  
150  
Storage temperature  
TSTG  
-65~+150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
VR=175V  
conditions  
MIN  
TYP  
MAX  
UNIT  
10  
1
Reverse voltage leakage current  
Forward voltage  
IR  
µA  
V
VR=20V  
VF  
IF=50mA  
1.1  
VR=0, f=1MHz  
0.52  
0.37  
0.23  
20  
Diode capacitance  
Cd  
VR=1V, f=1MHz  
pF  
VR=20V, f=1MHz  
0.35  
40  
IF=0.5mA, f=100MHz;note1  
IF=1mA, f=100MHz ;note1  
IF=10mA, f=100MHz;note1  
IF=100mA, f=100MHz;note1  
when switched from  
10  
20  
Diode forward resistance  
rD  
2
3.8  
1.35  
0.7  
Charge carrier life time  
Series inductance  
IF = 10 mA to IR = 6 mA; RL =  
100 Ω; measured at IR =3mA  
1.55  
1.4  
μS  
τL  
LS  
nH  
IF=100mA, f=100MHz  
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.  
1
JinYu  
semiconductor  
www.htsemi.com  

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