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BAP64-06WS PDF预览

BAP64-06WS

更新时间: 2024-11-22 00:56:35
品牌 Logo 应用领域
SECOS 二极管
页数 文件大小 规格书
2页 140K
描述
Small Signal General Purpose PiN Diode

BAP64-06WS 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.57
二极管类型:PIN DIODEBase Number Matches:1

BAP64-06WS 数据手册

 浏览型号BAP64-06WS的Datasheet PDF文件第2页 
BAP64-04WS / BAP64-05WS /  
BAP64-06WS  
Elektronische Bauelemente  
Small Signal General Purpose PiN Diode  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-323  
Low diode capacitance  
Low series inductance  
High voltage, current controlled  
RF resistor for RF attenuators and switches  
RF attenuators and switches  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
MARKING CODE  
D
Part Name  
Marking  
BAP64-04WS BAP64-05WS BAP64-06WS  
H
J
G
4W  
5W  
6W  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
2.20  
2.45  
1.35  
1.10  
1.40  
0.40  
A
B
C
D
E
F
1.80  
1.80  
1.15  
0.80  
1.20  
0.20  
G
H
J
K
L
0.100 REF.  
0.525 REF.  
Circuit  
0.08  
0.25  
-
-
0.650 TYP.  
PACKAGE INFORMATION  
Leader Size  
Package  
MPQ  
SOT-323  
3K  
7 inch  
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)  
Parameter  
Continuous Reverse Voltage  
Continuous Forward Current  
Power Dissipation  
Symbol  
Ratings  
Unit  
VR  
IF  
175  
V
100  
200  
mA  
mW  
PD  
Thermal Resistance Junction to Ambient  
Junction, Storage Temperature  
Rθ  
625  
°C / W  
°C  
JA  
TJ, TSTG  
150, -55 ~ +150  
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)  
Typ.  
Parameters  
Forward Voltage  
Symbol  
Min.  
Max.  
1.1  
10  
Unit  
Test Conditions  
VF  
-
-
-
-
-
-
-
-
-
-
-
V
IF =50mA  
-
VR =175V  
Reverse Voltage Leakage Current  
IR  
µA  
-
1
VR =20V  
0.52  
-
VR =0, f =1MHz  
VR =1 V, f =1MHz  
VR =20 V, f =1MHz  
IF = 0.5 mA, f =100MHz  
IF =1mA, f =100MHz  
IF =10mA, f =100MHz  
IF =100mA, f =100MHz  
Diode Capacitance  
CD  
pF  
-
-
-
-
-
-
0.5  
0.35  
40  
20  
Diode Forward Resistance1  
Charge Carrier Life Time  
rD  
3.8  
1.35  
When switched from  
IF =10mA to IR =6mA;  
RL =100 ;  
tL  
-
1.55  
-
µS  
measured at IR =3mA  
BAP64-04WS  
BAP64-06WS  
BAP64-05WS  
-
-
1.6  
1.4  
-
-
Series Inductance  
Note:  
LS  
nH  
IF=10mA, f=100MHz  
1.Guaranteed on AQL basis: inspection level S4,AQL 1.0.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
23-Jan-2014 Rev. A  
Page 1 of 2  

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