Datasheet > BAP64W-06

BAP64W-06

更新时间： 2024-11-22 00:56:35

品牌	Logo	应用领域
SECELECTRONICS		/
页数	文件大小	规格书
2页	141K
描述
Small Signal General Purpose PiN Diode

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中文翻译

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数据手册

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BAP64W-06 数据手册

BAP64W-04 / BAP64W-05 /

BAP64W-06

Elektronische Bauelemente

Small Signal General Purpose PiN Diode

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-23

ꢀ

Low diode capacitance

Low series inductance

High voltage, current controlled

RF resistor for RF attenuators and switches

RF attenuators and switches

Top View

C B

MARKING CODE

Part Name

Marking

BAP64W-04 BAP64W-05 BAP64W-06

Millimeter

REF.

Min.

Max.

3.04

2.55

1.40

1.15

Min.

Max.

0.18

0.60

0.177

2.80

2.10

1.20

0.89

0.09

0.45

0.08

Circuit



0.6 REF.

1.80

0.30

2.00

0.50

0.89

1.02

_{PACKAGE INFORMATION}



Package

MPQ

Leader Size

SOT-23

7 inch

MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)

Parameter

Continuous Reverse Voltage

Continuous Forward Current

Power Dissipation

Symbol

Ratings

175

Unit

V_R

I_F

100

P_D

250

Thermal Resistance Junction to Ambient

Junction, Storage Temperature

R_θ

500

°C / W

°C

T_J, T_STG

150, -55 ~ +150

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Typ.

Parameters

Forward Voltage

Symbol

Min.

Max.

1.1

Unit

Test Conditions

I_F=50mA

V_F

V_R=175V

Reverse Voltage Leakage Current

I_R

µA

V_R=20V

0.52

V_R=0, f =1MHz

Diode Capacitance

C_D

0.5

0.35

V_R=1 V, f =1MHz

V_R=20 V, f =1MHz

I_F= 0.5 mA, f =100MHz

I_F=1mA, f =100MHz

I_F=10mA, f =100MHz

I_F=100mA, f =100MHz

When switched from

I_F=10mA to I_R=6mA;

R_L=100 Ω;

measured at I_R=3mA

I_F=10mA, f=100MHz

Diode Forward Resistance¹

Charge Carrier Life Time

r_D

Ω

3.8

1.35

t_L

1.55

1.4

µS

Series Inductance

Note:

L_S

1.Guaranteed on AQL basis: inspection level S4,AQL 1.0.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Jan-2014 Rev. A

Page 1 of 2

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