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BAP64-06W-TP PDF预览

BAP64-06W-TP

更新时间: 2024-09-16 21:19:35
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 511K
描述
Pin Diode,

BAP64-06W-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.57二极管类型:PIN DIODE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAP64-06W-TP 数据手册

 浏览型号BAP64-06W-TP的Datasheet PDF文件第2页浏览型号BAP64-06W-TP的Datasheet PDF文件第3页 
M C C  
BAP64-04W  
BAP64-05W  
BAP64-06W  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
General  
Purpose Pin Diodes  
200mW  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
Low diode capacitance  
Low diode forward resistance  
SOT-323  
A
Maximum Ratings @ 25°C Unless Otherwise Specified  
D
3
Parameter  
Continuous Reverse Voltage  
Forward Current  
Symbol  
VR  
Limits  
Unit  
V
C
B
175  
1
2
100  
200  
IF  
mA  
mW  
F
E
Power Dissipation(TA=90oC)  
PD  
Junction and Storage temperature  
TjPstg  
-55~+150  
Thermal Resistance Junction to  
Ambient  
oC/W  
H
G
J
RthJA  
625  
K
DIMENSIONS  
INCHES  
MAX  
MM  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
B
C
D
E
F
G
H
J
MIN  
.071  
.045  
.083  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
.087  
.053  
.096  
Parameter  
Symbol Min. TYP Max. Unit  
Conditions  
Reverse Voltage  
Leakage  
IR  
10  
VR=175V  
.026 Nominal  
0.65Nominal  
uA  
.047  
.012  
.000  
.035  
.004  
.006  
.055  
.016  
.004  
.039  
.010  
.016  
1.20  
.30  
.000  
.90  
.100  
.15  
1.40  
.40  
.100  
1.00  
.250  
.40  
1.0  
1.1  
VR=20V  
Current  
Forward voltage  
VF  
V
IF=50mA  
K
Suggested Solder  
Pad Layout  
0.70  
Cd1  
Cd2  
Cd3  
rD  
0.52  
pF VR=0V,f=1MHz  
pF VR=1V,f=1MHz  
pF VR=20V,f=1MHz  
Diode capacitance  
0.37 0.5  
0.23 0.35  
0.90  
20  
40  
IF=0.5mA, f=100MHz  
1.90  
Diode forward  
rD  
rD  
10  
2
20  
IF=1mA , f=100MHz  
IF=10mA , f=100MHz  
resistance  
3.8  
0.65  
rD  
0.7  
1.35  
IF=100mA , f=100MHz  
0.65  
when switched from  
IF=10 mAto IR= 6 mA; RL=  
100Ω;measured at IR=3mA  
Charge carrier  
life time  
1.55  
μS  
τL  
Series inductance  
Ls  
BAP64-04W/06W  
BAP64-05W  
1.6  
1.4  
nH  
nH  
IF=100mA, f=100MHz  
IF=100mA, f=100MHz  
www.mccsemi.com  
1 of 3  
Revision: C  
2013/09/24  

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