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BAP64-06 PDF预览

BAP64-06

更新时间: 2024-11-21 06:41:27
品牌 Logo 应用领域
科信 - KEXIN 二极管
页数 文件大小 规格书
1页 38K
描述
Silicon PIN diode

BAP64-06 数据手册

  
SMD Type  
Diodes  
Silicon PIN diode  
BAP64-06  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
High voltage, current controlled  
RF resistor for RF attenuators and switches  
Low diode capacitance  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
Low diode forward resistance  
Low series inductance  
+0.1  
1.9  
-0.1  
For applications up to 3 GHz.  
Absolute Maximum Ratings Ta = 25  
Parameter  
continuous reverse voltage  
continuous forward current  
Symbol  
VR  
Min  
Max  
175  
Unit  
V
IF  
100  
mA  
mW  
Ptot  
Tstg  
Tj  
250  
total power dissipation  
storage temperature  
junction temperature  
Ts = 90  
-65  
-65  
+150  
+150  
220  
thermal resistance from junction to soldering point  
Rth j-s  
K/W  
Electrical Characteristics Ta = 25  
Parameter  
forward voltage  
Symbol  
VF  
Conditions  
IF = 50 mA  
Min  
Typ  
Max  
Unit  
V
0.95  
1.1  
10  
1
VR = 175 V  
reverse leakage current  
VR  
A
VR = 20 V  
VR = 0; f = 1 MHz  
VR = 1 V; f = 1 MHz  
VR = 20 V; f = 1 MHz  
0.52  
0.37  
0.23  
20  
diode capacitance  
Cd  
pF  
0.35  
40  
IF = 0.5 mA; f = 100 MHz; note 1  
IF = 1 mA; f = 100 MHz; note 1  
10  
20  
diode forward resistance  
charge carrier life time  
rD  
IF = 10 mA; f = 100 MHz; note 1  
2
3.8  
1.35  
IF = 100 mA; f = 100 MHz; note 1  
when switched from IF = 10 mA to  
IR = 6mA; RL = 100 ,measured at IR = 3 mA  
0.7  
1.55  
1.4  
s
L
series inductance  
Note  
LS  
nH  
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.  
Marking  
Marking  
6Kp  
1
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