Datasheet > BAP64-05WS

BAP64-05WS

更新时间： 2024-11-07 00:56:35

品牌	Logo	应用领域
SECOS		/
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2页	140K
描述
Small Signal General Purpose PiN Diode

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中文翻译

获取价格

数据手册

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BAP64-05WS 数据手册

BAP64-04WS / BAP64-05WS /

BAP64-06WS

Elektronische Bauelemente

Small Signal General Purpose PiN Diode

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-323

ꢀ

Low diode capacitance

Low series inductance

High voltage, current controlled

RF resistor for RF attenuators and switches

RF attenuators and switches

Top View

C B

MARKING CODE

Part Name

Marking

BAP64-04WS BAP64-05WS BAP64-06WS

Millimeter

Min. Max.

REF.

Min.

Max.

2.20

2.45

1.35

1.10

1.40

0.40

1.80

1.15

0.80

1.20

0.20

0.100 REF.

0.525 REF.

Circuit



0.08

0.25

0.650 TYP.

PACKAGE INFORMATION



Leader Size

Package

MPQ

SOT-323

7 inch

MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)

Parameter

Continuous Reverse Voltage

Continuous Forward Current

Power Dissipation

Symbol

Ratings

Unit

V_R

I_F

175

100

200

P_D

Thermal Resistance Junction to Ambient

Junction, Storage Temperature

R_θ

625

°C / W

°C

T_J, T_STG

150, -55 ~ +150

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Typ.

Parameters

Forward Voltage

Symbol

Min.

Max.

1.1

Unit

Test Conditions

V_F

I_F=50mA

V_R=175V

Reverse Voltage Leakage Current

I_R

µA

V_R=20V

0.52

V_R=0, f =1MHz

V_R=1 V, f =1MHz

V_R=20 V, f =1MHz

I_F= 0.5 mA, f =100MHz

I_F=1mA, f =100MHz

I_F=10mA, f =100MHz

I_F=100mA, f =100MHz

Diode Capacitance

C_D

0.5

0.35

Diode Forward Resistance¹

Charge Carrier Life Time

r_D

Ω

3.8

1.35

When switched from

I_F=10mA to I_R=6mA;

R_L=100 Ω;

t_L

1.55

µS

measured at I_R=3mA

BAP64-04WS

BAP64-06WS

BAP64-05WS

1.6

1.4

Series Inductance

Note:

L_S

I_F=10mA, f=100MHz

1.Guaranteed on AQL basis: inspection level S4,AQL 1.0.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

23-Jan-2014 Rev. A

Page 1 of 2

中文翻译

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