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BAP64-05W PDF预览

BAP64-05W

更新时间: 2024-11-05 06:41:27
品牌 Logo 应用领域
SECOS 二极管
页数 文件大小 规格书
2页 191K
描述
Small Signal General Purpose Pin Diode

BAP64-05W 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.57Is Samacsys:N
二极管类型:PIN DIODEBase Number Matches:1

BAP64-05W 数据手册

 浏览型号BAP64-05W的Datasheet PDF文件第2页 
BAP64-05W  
Small Signal General Purpose Pin Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-323  
FEATURES  
z
z
z
z
z
z
z
Low diode capacitance  
Low diode forward resistance  
Low series inductance  
High voltage, current controlled  
RF resistor for RF attenuators and switches  
For applications up to 3 GHz  
A
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
RF attenuators and switches  
D
H
J
G
3
PACKAGING INFORMATION  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
2.20  
2.45  
1.35  
1.10  
1.40  
0.40  
Weight: 0.0074 g (Approximate)  
A
B
C
D
E
F
1.80  
1.80  
1.15  
0.80  
1.20  
0.20  
G
H
J
0.100 REF.  
0.525 REF.  
0.08  
0.25  
K
L
-
-
0.650 TYP.  
MARKING CODE  
1
2
5W  
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)  
Parameter  
Continuous Reverse Voltage  
Continuous Forward Current  
Power Dissipation  
Symbol  
Ratings  
Unit  
VR  
IF  
175  
V
mA  
100  
200  
PD  
mW  
°C / W  
°C  
Thermal Resistance Junction to Ambient  
Junction, Storage Temperature  
RθJA  
TJ, TSTG  
625  
150, -65 ~ +150  
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)  
Typ.  
Parameters  
Symbol  
Min.  
Max.  
1.1  
10  
Unit  
Test Conditions  
Forward Voltage  
VF  
-
-
V
IF = 50 mA  
VR = 175 V  
VR = 20 V  
Reverse Voltage Leakage Current  
Diode Capacitance  
IR  
-
-
μA  
1
-
-
-
-
-
-
-
0.52  
0.37  
0.23  
20  
-
VR = 0, f = 1 MHz  
CD  
pF  
-
VR = 1 V, f = 1 MHz  
0.35  
40  
VR = 20 V, f = 1 MHz  
IF = 0.5 mA, f = 100 MHz  
IF = 1 mA, f = 100 MHz  
IF = 10 mA, f = 100 MHz  
IF = 100 mA, f = 100 MHz  
10  
20  
Diode Forward Resistance  
rD*  
Ω
2
3.8  
1.35  
0.7  
When switched from  
IF = 10 mA to IR = 6 mA;  
RL = 100 ;  
Charge Carrier Life Time  
Series Inductance  
τL  
-
-
1.55  
1.4  
-
-
μS  
measured at IR =3mA  
LS  
nH  
* Guaranteed on AQL basis: inspection level S4, AQL 1.0.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
01-Jun-2005 Rev. A  
Page 1 of 2  

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