BAP64-05W

更新时间： 2024-11-05 08:48:11

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	467K
描述
General Purpose Pin Diodes 200mW

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中文翻译

获取价格

数据手册

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BAP64-05W 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

BAP64-05W

Features

General

Purpose Pin Diodes

200mW

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Low diode capacitance

Low diode forward resistance

MARKING: 5W

SOT-323

Maximum Ratings @ 25°C Unless Otherwise Specified

Parameter

Continuous Reverse Voltage

Forward Current

Symbol

V_R

Limits

Unit

175

100

200

I_F

℃

Power Dissipation(T_A=90^oC)

P_D

Junction and Storage temperature

T_j，P_stg

-65~+150

Thermal Resistance Junction to

Ambient

^oC/W

RthJA

625

DIMENSIONS

INCHES

MAX

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIM

MIN

.071

.045

.079

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

.087

.053

.087

Parameter

Symbol Min. TYP Max. Unit

Conditions

Reverse Voltage

Leakage

I_R

V_R=175V

.026 Nominal

0.65Nominal

1.20

.047

.012

.000

.035

.004

.012

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

.30

.000

.90

.100

.30

1.0

1.1

V_R=20V

Current

Forward voltage

V_F

I_F=50mA

Suggested Solder

Pad Layout

0.70

C_d1

C_d2

C_d3

r_D

0.52

0.37

pF V_R=0V,f=1MHz

Diode capacitance

V_R=1V,f=1MHz

0.23 0.35

pF V_R=20V,f=1MHz

0.90

Ω

I_F=0.5mA, f=100MHz

1.90

Diode forward

r_D

Ω

I_F=1mA , f=100MHz

I_F=10mA , f=100MHz

resistance

3.8

0.65

r_D

0.7

1.35

Ω

I_F=100mA , f=100MHz

0.65

when switched from

I_{F=10 mAto IR= 6 mA; RL=}

100Ω;measured at I_R=3mA

IF=100mA, f=100MHz

Charge carrier

life time

1.55

1.4

μS

τ_L

Series inductance

L_S

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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