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BAP64-05W PDF预览

BAP64-05W

更新时间: 2024-11-06 08:48:11
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 467K
描述
General Purpose Pin Diodes 200mW

BAP64-05W 数据手册

 浏览型号BAP64-05W的Datasheet PDF文件第2页浏览型号BAP64-05W的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
BAP64-05W  
Features  
General  
Purpose Pin Diodes  
200mW  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
·
Low diode capacitance  
Low diode forward resistance  
MARKING: 5W  
SOT-323  
A
Maximum Ratings @ 25°C Unless Otherwise Specified  
D
Parameter  
Continuous Reverse Voltage  
Forward Current  
Symbol  
VR  
Limits  
Unit  
V
C
B
175  
100  
200  
IF  
mA  
mW  
F
E
Power Dissipation(TA=90oC)  
PD  
Junction and Storage temperature  
TjPstg  
-65~+150  
Thermal Resistance Junction to  
Ambient  
oC/W  
H
G
J
RthJA  
625  
K
DIMENSIONS  
INCHES  
MAX  
MM  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
.087  
.053  
.087  
Parameter  
Symbol Min. TYP Max. Unit  
Conditions  
Reverse Voltage  
Leakage  
IR  
10  
VR=175V  
.026 Nominal  
0.65Nominal  
1.20  
uA  
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
1.0  
1.1  
VR=20V  
Current  
G
H
J
Forward voltage  
VF  
V
IF=50mA  
K
Suggested Solder  
Pad Layout  
0.70  
Cd1  
Cd2  
Cd3  
rD  
0.52  
0.37  
pF VR=0V,f=1MHz  
Diode capacitance  
pF  
VR=1V,f=1MHz  
0.23 0.35  
pF VR=20V,f=1MHz  
0.90  
20  
40  
IF=0.5mA, f=100MHz  
1.90  
Diode forward  
rD  
rD  
10  
2
20  
IF=1mA , f=100MHz  
IF=10mA , f=100MHz  
resistance  
3.8  
0.65  
rD  
0.7  
1.35  
IF=100mA , f=100MHz  
0.65  
when switched from  
IF=10 mAto IR= 6 mA; RL=  
100Ω;measured at IR=3mA  
IF=100mA, f=100MHz  
Charge carrier  
life time  
1.55  
1.4  
μS  
τL  
Series inductance  
LS  
nH  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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General Purpose Pin Diodes 250mW