Datasheet > AVD002P_07

AVD002P_07

更新时间： 2025-08-19 12:50:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD002P_07 数据手册

AVD002P

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .280 4L PILL (A)

The ASI AVD002P is Designed for

Class C, DME/TACAN Applications up

to 1150 MHz.

.100x45°

FEATURES:

• Class C Operation

• P_G= 9.0 dB at 2.0 W/1150 MHz

• Omnigold™ Metalization System

ØG

MAXIMUM RATINGS

250 mA

37 V

I_C

V_CC

P_DISS

T_J

M INIM UM

M AXIM UM

DIM

inches

inches / mm

.095 / 2.41

.195 / 4.95

1.000 / 25.40

.004 / 0.10

.050 / 1.27

.105 / 2.67

.205 / 5.21

10 W @ T_C≤ 100 °C

-65 °C to +200 °C

-65 °C to +150 °C

10 °C/W

.007 / 0.18

.065 / 1.65

.145 / 3.68

.285 / 7.21

.275 / 6.99

T_STG

θ_JC

ORDER CODE: ASI10553

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 5.0 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

3.5

_CE= 35 V

_CE= 5.0 V

1.0

---

I_C= 100 A

300

h_FE

9.0

P_G

V_CC= 35 V P_OUT= 2.0 W

f = 1025 – 1150 MHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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