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AVD035P PDF预览

AVD035P

更新时间: 2024-11-25 22:05:59
品牌 Logo 应用领域
ASI 晶体晶体管射频放大器
页数 文件大小 规格书
1页 19K
描述
NPN SILICON RF POWER TRANSISTOR

AVD035P 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CRDB-F4
Reach Compliance Code:unknown风险等级:5.06
Is Samacsys:N配置:SINGLE
最小直流电流增益 (hFE):15最高频带:L BAND
JESD-30 代码:O-CRDB-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
最大功率耗散 (Abs):100 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

AVD035P 数据手册

  
AVD035P  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .280 4L PILL (A)  
A
.100x45°  
DESCRIPTION:  
The ASI AVD035P is Designed for  
C
B
FEATURES:  
ØG  
·
·
· Omnigold™ Metalization System  
D
F
E
MAXIMUM RATINGS  
2.5 A PEAK  
55 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.095 / 2.41  
.195 / 4.95  
1.000 / 25.40  
.004 / 0.10  
.050 / 1.27  
.105 / 2.67  
.205 / 5.21  
A
B
C
D
E
F
VCB  
PDISS  
TJ  
100 W PEAK  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.0 OC/W  
.007 / 0.18  
.065 / 1.65  
.145 / 3.68  
.285 / 7.21  
.275 / 6.99  
G
TSTG  
qJC  
ORDER CODE: ASI10559  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 10 mA  
IE = 1 mA  
65  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
65  
V
3.5  
V
VCE = 50 V  
VCE = 5.0 V  
5.0  
mA  
---  
hFE  
IC = 500 mA  
15  
120  
PG  
10  
35  
dB  
%
VCC = 50 V  
POUT = 35 W  
f = 1025 - 1150 MHz  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

AVD035P 替代型号

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