Datasheet > AVD05S

AVD05S

更新时间： 2024-11-26 03:19:51

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	14K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD05S 数据手册

AVD0.5S

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .280 4L STUD

DESCRIPTION:

45°

The ASI AVD0.5S is Designed for

Class A, DME/TACAN Applications up

to 1150 MHz.

FEATURES:

• Class A Operation

• P_G= 10 dB at 0.5 W/1150 MHz

• Omnigold™ Metalization System

#8-32 UNC

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

300 mA

20 V

I_C

V_CE

P_DISS

T_J

.572 / 14.53

.130 / 3.30

--- W

.245 / 6.22

.255 / 6.48

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

35.0 ^OC/W

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 5.0 mA

I_E= 1.0 mA

V_CE= 28 V

V_CE= 5.0 V

BV_CEO

BV_EBO

I_CES

3.5

1.0

---

I_C= 100 mA

120

h_FE

V_CC= 12.5 V P_OUT= 0.5 W

f = 1025 - 1150 MHz

P_G

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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