AVD090F

更新时间： 2024-11-22 22:05:59

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD090F 数据手册

AVD090F

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .250 2L FLG (B)

.100 X 45°

Ø D

DESCRIPTION:

.088 x 45°

CHAMFER

The ASI AVD090F is Designed for

FEATURES:

· Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.095 / 2.41

1.050 / 26.67

.245 / 6.22

.105 / 2.67

.255 / 6.48

.140 / 3.56

.572 / 14.53

.810 / 20.57

.285 / 7.24

.007 / 0.18

.072 / 1.83

.130 / 3.30

.210 / 5.33

6.5 A PEAK

55 V

I_C

.120 / 3.05

.552 / 14.02

.790 / 20.07

V_CB

P_DISS

T_J

250 W PEAK

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.6 ^OC/W

.003 / 0.08

.052 / 1.32

.120 / 3.05

T_STG

q_JC

ORDER CODE: ASI10562

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_E= 1 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 W

3.5

V_CB= 50 V

V_CE= 5.0 V

6.25

120

---

h_FE

I_C= 500 mA

P_G

8.5

V_CC= 50 V P_OUT= 90 W

f = 1025 - 1150 MHz

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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