Datasheet > AVD015F_07

AVD015F_07

更新时间： 2022-10-12 02:22:28

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD015F_07 数据手册

AVD015F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .250 2L FLG (B)

The ASI AVD015F is Designed for

Class C, DME/TACAN Applications up

to 1150 MHz.

.100 X 45°

Ø D

.088 x 45°

CHAMFER

FEATURES:

• Class C Operation

• P_G= 10 dB at 15 W/1150 MHz

• Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.095 / 2.41

1.050 / 26.67

.245 / 6.22

.120 / 3.05

.552 / 14.02

.790 / 20.07

.105 / 2.67

1.25 A ^PEAK

50 V

I_C

V_CB

P_DISS

T_J

.255 / 6.48

.140 / 3.56

.572 / 14.53

.810 / 20.57

.285 / 7.24

.007 / 0.18

.072 / 1.83

.130 / 3.30

.210 / 5.33

50 W ^PEAK

.003 / 0.08

.052 / 1.32

.120 / 3.05

-65 °C to +200 °C

-65 °C to +150 °C

2.0 °C/W

T_STG

θ_JC

ORDER CODE: ASI10556

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

3.5

_CB= 50 V

_CE= 5.0 V

2.5

---

I_C= 500 mA

120

h_FE

10.0

P_G

V_CC= 50 V

P_OUT= 15 W

f = 1025 – 1150 MHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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