Datasheet > AVD090F_07

AVD090F_07

更新时间： 2024-11-26 08:40:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD090F_07 数据手册

AVD090F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .250 2L FLG (B)

The ASI AVD090F is Designed for

High Peak power & low duty cycle,

IFF, DME, and TACAN Applications.

.100 X 45°

Ø D

.088 x 45°

CHAMFER

FEATURES:

• Internal Input Matching Network

• P_G= 8.4 dB at 90 W/1150 MHz

• Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.095 / 2.41

1.050 / 26.67

.245 / 6.22

.120 / 3.05

.552 / 14.02

.790 / 20.07

.105 / 2.67

1.0 A ^PEAK

55 V

I_C

.255 / 6.48

.140 / 3.56

.572 / 14.53

.810 / 20.57

.285 / 7.24

.007 / 0.18

.072 / 1.83

.130 / 3.30

.210 / 5.33

V_CB

P_DISS

T_J

292 W @ 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

.003 / 0.08

.052 / 1.32

.120 / 3.05

T_STG

0.6 °C/W

θ_JC

ORDER CODE: ASI10562

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_C= 25 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

3.5

_CB= 50 V

_CE= 5.0 V

100

200

---

I_C= 1.0 A

h_FE

V_CE= 50 V

f = 1.0 MHz

C_OB

8.4

P_G

V_CC= 50 V

P_IN= 13 W

P_OUT= 90 W

f = 1025 - 1150 MHz

η_C

Pulse with = 10 µS, Duty Cycle = 1.0 %

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without notice.

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