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AVD004F

更新时间: 2024-10-27 22:05:59
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

AVD004F 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-F2
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE最小直流电流增益 (hFE):30
最高频带:L BANDJESD-30 代码:O-CXFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):18 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

AVD004F 数据手册

  
AVD004F  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .250 2L FLG(B)  
A
.100 X 45°  
DESCRIPTION:  
Ø D  
.088 x 45°  
CHAMFER  
The ASI AVD004F is Designed for  
C
B
FEATURES:  
E
·
F
G
H
·
K
· Omnigold™ Metalization System  
J
I
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
MAXIMUM RATINGS  
.095 / 2.41  
1.050 / 26.67  
.245 / 6.22  
.120 / 3.05  
.552 / 14.02  
.790 / 20.07  
.105 / 2.67  
A
B
C
D
E
F
G
H
I
650 mA PEAK  
32 V  
IC  
.255 / 6.48  
.140 / 3.56  
.572 / 14.53  
.810 / 20.57  
.285 / 7.24  
.007 / 0.18  
.072 / 1.83  
.130 / 3.30  
.210 / 5.33  
VCB  
PDISS  
TJ  
18 W PEAK  
.003 / 0.08  
.052 / 1.32  
.120 / 3.05  
-65 OC to +200 OC  
-65 OC to +150 OC  
5.0 OC/W  
J
K
TSTG  
qJC  
ORDER CODE: ASI10554  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 1 mA  
IC = 5 mA  
IE = 1 mA  
VCE = 28 V  
VCE = 5.0 V  
45  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
45  
V
3.5  
V
1.0  
mA  
---  
hFE  
IC = 200 mA  
30  
300  
PG  
9.0  
35  
Db  
%
VCC = 28 V  
POUT = 4.0 W  
f = 1025 - 1150 MHz  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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