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AVD015P_07

更新时间: 2024-11-23 08:40:43
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

AVD015P_07 数据手册

  
AVD015P  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .280 4L PILL (A)  
The ASI AVD015P is Designed for  
Class C, DME/TACAN Applications  
up to 1150 MHz.  
A
.100x45°  
C
B
FEATURES:  
Class C Operation  
PG = 10 dB at 15 W/1150 MHz  
Omnigold™ Metalization System  
ØG  
D
F
E
MAXIMUM RATINGS  
1.25 A PEAK  
50 V  
IC  
VCB  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.095 / 2.41  
.195 / 4.95  
1.000 / 25.40  
.004 / 0.10  
.050 / 1.27  
.105 / 2.67  
.205 / 5.21  
A
B
C
D
E
F
50 W PEAK  
.007 / 0.18  
.065 / 1.65  
.145 / 3.68  
.285 / 7.21  
-65 °C to +200 °C  
-65 °C to +150 °C  
2.0 °C/W  
.275 / 6.99  
G
TSTG  
θJC  
ORDER CODE: ASI10557  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 10 mA  
IE = 1.0 mA  
65  
V
65  
BVCER  
BVEBO  
ICES  
V
RBE = 10 Ω  
3.5  
V
VCB = 50 V  
2.5  
mA  
---  
VCE = 5.0 V  
IC = 500 mA  
15  
120  
hFE  
10  
35  
PG  
dB  
%
VCC = 50 V  
POUT = 15 W  
f = 1025 - 1150MHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. B  
1/1  

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