Datasheet > AVD015P_07

AVD015P_07

更新时间： 2022-10-12 02:22:24

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD015P_07 数据手册

AVD015P

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .280 4L PILL (A)

The ASI AVD015P is Designed for

Class C, DME/TACAN Applications

up to 1150 MHz.

.100x45°

FEATURES:

• Class C Operation

• P_G= 10 dB at 15 W/1150 MHz

• Omnigold™ Metalization System

ØG

MAXIMUM RATINGS

1.25 A ^PEAK

50 V

I_C

V_CB

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.095 / 2.41

.195 / 4.95

1.000 / 25.40

.004 / 0.10

.050 / 1.27

.105 / 2.67

.205 / 5.21

50 W ^PEAK

.007 / 0.18

.065 / 1.65

.145 / 3.68

.285 / 7.21

-65 °C to +200 °C

-65 °C to +150 °C

2.0 °C/W

.275 / 6.99

T_STG

θ_JC

ORDER CODE: ASI10557

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_E= 1.0 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

3.5

V_CB= 50 V

2.5

---

V_CE= 5.0 V

I_C= 500 mA

120

h_FE

P_G

V_CC= 50 V

P_OUT= 15 W

f = 1025 - 1150MHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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