Datasheet > AVD015F

AVD015F

更新时间： 2024-01-13 00:08:22

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD015F 数据手册

AVD015F

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .250 2L FLG (B)

.100 X 45°

DESCRIPTION:

Ø D

.088 x 45°

CHAMFER

The ASI AVD015F is Designed for

FEATURES:

· Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

MAXIMUM RATINGS

.095 / 2.41

1.050 / 26.67

.245 / 6.22

.105 / 2.67

1.25 A PEAK

50 V

I_C

.255 / 6.48

.140 / 3.56

.572 / 14.53

.810 / 20.57

.285 / 7.24

.007 / 0.18

.072 / 1.83

.130 / 3.30

.210 / 5.33

.120 / 3.05

V_CB

P_DISS

T_J

.552 / 14.02

.790 / 20.07

50 W PEAK

.003 / 0.08

.052 / 1.32

.120 / 3.05

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

2.0 ^OC/W

T_STG

q_JC

ORDER CODE: ASI10556

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_E= 1 mA

BV_CER

BV_EBO

I_CES

R_BE= 10 W

3.5

V_CB= 50 V

V_CE= 5.0 V

2.5

---

h_FE

I_C= 500 mA

120

P_G

10.0

V_CC= 50 V

MHz

P_OUT= 15 W

f = 1025 – 1150

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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