Datasheet > AUIRFS3006-7P

AUIRFS3006-7P

更新时间： 2024-09-28 01:13:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	251K
描述
HEXFETPower MOSFET

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中文翻译

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AUIRFS3006-7P 数据手册

PD - 97714A

AUTOMOTIVE GRADE

AUIRFS3006-7P

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

V_DSS

60V

1.5m

2.1m

293A

240A

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive

avalanche rating . These features combine to make this design

an extremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

D²Pak 7 Pin

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Max.

293

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

207

240

1172

P_D@T_C= 25°C

375

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

± 20

303

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_JC

Junction-to-Case

°C/W

R_JA

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

12/2/11

12 3 4 5 6 7...12

中文翻译

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与AUIRFS3006-7P相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS3006-7TRL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006-7TRR	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3006TRL	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3006TRR	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, M
AUIRFS3107	INFINEON	获取价格	Advanced Process Technology
AUIRFS3107-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3107-7TRL	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3107-7TRR	INFINEON	获取价格	HEXFETPower MOSFET
AUIRFS3107TRL	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me
AUIRFS3107TRR	INFINEON	获取价格	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Me

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