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AUIRFS3006TRR

更新时间： 2024-01-02 01:06:24
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 239K
描述
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRFS3006TRR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.11其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：320 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：195 A最大漏极电流 (ID)：195 A
最大漏源导通电阻：0.0025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：375 W
最大脉冲漏极电流 (IDM)：1080 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFS3006TRR 数据手册

 浏览型号AUIRFS3006TRR的Datasheet PDF文件第2页浏览型号AUIRFS3006TRR的Datasheet PDF文件第3页浏览型号AUIRFS3006TRR的Datasheet PDF文件第4页浏览型号AUIRFS3006TRR的Datasheet PDF文件第5页浏览型号AUIRFS3006TRR的Datasheet PDF文件第6页浏览型号AUIRFS3006TRR的Datasheet PDF文件第7页 
PD - 97713  
AUTOMOTIVE GRADE  
AUIRFS3006  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
●
Advanced Process Technology  
D
S
VDSS  
RDS(on) typ.  
max.  
60V  
2.0m  
2.5m  
270A  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
G
ID  
(Silicon Limited)  
ID (Package Limited)  
195A  
Description  
D
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating . These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
S
G
D2Pak  
AUIRFS3006  
applications and a wide variety of other applications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
270  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
191  
A
195  
1080  
PD @TC = 25°C  
W
375  
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
320  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
EAR  
mJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
10  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.4  
Units  
RθJC  
Junction-to-Case  
°C/W  
RθJA  
–––  
40  
Junction-to-Ambient  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/22/11  
1234567...12

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