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AUIRFS4010-7P

更新时间： 2024-01-16 19:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 693K
描述
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7

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AUIRFS4010-7P 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.62其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：330 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：190 A最大漏极电流 (ID)：190 A
最大漏源导通电阻：0.004 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：380 W最大脉冲漏极电流 (IDM)：740 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFS4010-7P 数据手册

 浏览型号AUIRFS4010-7P的Datasheet PDF文件第2页浏览型号AUIRFS4010-7P的Datasheet PDF文件第3页浏览型号AUIRFS4010-7P的Datasheet PDF文件第4页浏览型号AUIRFS4010-7P的Datasheet PDF文件第5页浏览型号AUIRFS4010-7P的Datasheet PDF文件第6页浏览型号AUIRFS4010-7P的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFS4010-7P  
HEXFET® Power MOSFET  
VDSS  
RDS(on) typ.  
max.  
100V  
Features  
3.3m  
4.0m  
190A  
Advanced Process Technology  
Ultra Low On-Resistance  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
ID  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
D2Pak 7 Pin  
AUIRFS4010-7P  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Tube  
Quantity  
50  
AUIRFS4010-7P  
AUIRFS4010-7P  
D2Pak 7 Pin  
AUIRFS4010-7TRL  
Tape and Reel Left  
800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
190  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
130  
740  
380  
2.5  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
330  
Single Pulse Avalanche Energy (Thermally Limited)   
IAR  
Avalanche Current   
See Fig.14,15, 22a, 22b  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
mJ  
V/ns  
26  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
–––  
0.40  
RJC  
RJA  
°C/W  
Junction-to-Ambient   
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-27  
1234567...10

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