AUIRFS4010TRR

更新时间： 2024-02-28 17:56:50

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	662K
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中文翻译

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数据手册

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AUIRFS4010TRR 数据手册

PD - 96396A

AUTOMOTIVE GRADE

AUIRFS4010

Features

AUIRFSL4010

Advanced Process Technology

UltraLowOn-Resistance

HEXFET^®Power MOSFET

175°COperatingTemperature

Fast Switching

V_DSS

R_DS(on)typ.

100V

3.9m

4.7m

180A

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

max.

I_D

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

D²Pak

AUIRFS4010

TO-262

AUIRFSL4010

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

180

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

127

720

P_D@T_C= 25°C

375

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

E_AS

I_AR

± 20

318

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Typ.

–––

Max.

0.40

Units

R_θJC

Junction-to-Case

°C/W

R_θ

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/1/11

12 3 4 5 6 7...13

中文翻译

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