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AUIRFS3607TRL

更新时间： 2024-01-15 10:57:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 709K
描述
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRFS3607TRL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.12其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：120 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：80 A最大漏极电流 (ID)：80 A
最大漏源导通电阻：0.009 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：140 W
最大脉冲漏极电流 (IDM)：310 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFS3607TRL 数据手册

 浏览型号AUIRFS3607TRL的Datasheet PDF文件第2页浏览型号AUIRFS3607TRL的Datasheet PDF文件第3页浏览型号AUIRFS3607TRL的Datasheet PDF文件第4页浏览型号AUIRFS3607TRL的Datasheet PDF文件第5页浏览型号AUIRFS3607TRL的Datasheet PDF文件第6页浏览型号AUIRFS3607TRL的Datasheet PDF文件第7页 
AUIRFS3607  
AUIRFSL3607  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
VDSS  
75V  
7.34m  
9.0m  
80A  
Advanced Process Technology  
RDS(on) typ.  
Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
max.  
ID  
D
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications  
S
S
D
G
G
G
Gate  
D
Drain  
S
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRFSL3607  
AUIRFS3607  
Package Type  
TO-262  
Orderable Part Number  
Quantity  
50  
50  
800  
AUIRFSL3607  
AUIRFS3607  
AUIRFS3607TRL  
Tube  
Tape and Reel Left  
D2-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
80  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
56  
310  
140  
0.96  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
V/ns  
mJ  
A
VGS  
dv/dt  
Gate-to-Source Voltage  
Peak Diode Recovery   
± 20  
27  
EAS  
IAR  
Single Pulse Avalanche Energy (Thermally Limited)   
Avalanche Current   
120  
46  
14  
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
Junction-to-Ambient (PCB Mount), D2 Pak  
–––  
1.045  
RJC  
RJA  
°C/W  
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2016-2-12  
1234567...11

中文翻译

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AUIRFS3607TRL 替代型号

型号 品牌 替代类型 描述 数据表
IRFSL3607PBF INFINEON

完全替代

 HEXFET Power MOSFET
IRFR3607TRPBF INFINEON

类似代替

 High Efficiency Synchronous Rectification in SMPS
IRFR3607PBF INFINEON

类似代替

 HEXFET Power MOSFET

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