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AUIRFS3806

更新时间： 2024-01-13 16:02:44
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 730K
描述
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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AUIRFS3806 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.33
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：73 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：43 A
最大漏极电流 (ID)：43 A最大漏源导通电阻：0.0158 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：71 W最大脉冲漏极电流 (IDM)：170 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFS3806 数据手册

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AUTOMOTIVE GRADE  
AUIRFS3806  
HEXFET® Power MOSFET  
Features  
VDSS  
60V  
12.6m  
15.8m  
43A  
Advanced Process Technology  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
ID  
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
applications.  
S
G
G
Gate  
D
Drain  
S
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
800  
AUIRFS3806  
AUIRFS3806TRL  
AUIRFS3806  
D2-Pak  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
43  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
31  
170  
71  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.47  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
73  
Single Pulse Avalanche Energy (Thermally Limited)   
IAR  
Avalanche Current   
25  
7.1  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
mJ  
V/ns  
24  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
Junction-to-Ambient (PCB Mount), D2 Pak  
–––  
2.12  
RJC  
RJA  
°C/W  
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2017-10-12  
1234567...10

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