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AUIRFS3107TRL PDF预览

AUIRFS3107TRL

更新时间: 2024-02-23 10:09:45
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 705K
描述
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

AUIRFS3107TRL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.1其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):195 A最大漏极电流 (ID):195 A
最大漏源导通电阻:0.003 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):370 W
最大脉冲漏极电流 (IDM):900 A子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRFS3107TRL 数据手册

 浏览型号AUIRFS3107TRL的Datasheet PDF文件第2页浏览型号AUIRFS3107TRL的Datasheet PDF文件第3页浏览型号AUIRFS3107TRL的Datasheet PDF文件第4页浏览型号AUIRFS3107TRL的Datasheet PDF文件第5页浏览型号AUIRFS3107TRL的Datasheet PDF文件第6页浏览型号AUIRFS3107TRL的Datasheet PDF文件第7页 
AUIRFS3107  
AUIRFSL3107  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
VDSS  
75V  
Advanced Process Technology  
RDS(on) typ.  
max.  
2.5m  
3.0m  
230A  
Ultra Low On-Resistance  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
ID (Silicon Limited)  
ID (Package Limited)  
195A  
D
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
applications  
S
S
D
G
G
G
Gate  
D
Drain  
S
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRFSL3107  
AUIRFS3107  
Package Type  
TO-262  
Orderable Part Number  
Quantity  
50  
AUIRFSL3107  
AUIRFS3107  
AUIRFS3107TRL  
Tube  
Tape and Reel Left  
50  
800  
D2-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
230  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
160  
195  
A
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
900  
370  
2.5  
PD @TC = 25°C  
W
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
300  
IAR  
Avalanche Current   
See Fig.14,15, 22a, 22b  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
mJ  
V/ns  
14  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
Junction-to-Ambient (PCB Mount), D2 Pak  
–––  
0.40  
RJC  
RJA  
°C/W  
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2017-10-11  

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