Datasheet > AUIRFS3306TRL

AUIRFS3306TRL

更新时间： 2024-01-08 08:38:02

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	673K
描述
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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技术参数
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AUIRFS3306TRL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	0.8	其他特性：	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	184 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	120 A	最大漏极电流 (ID)：	120 A
最大漏源导通电阻：	0.0042 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	230 W
最大脉冲漏极电流 (IDM)：	620 A	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRFS3306TRL 数据手册

AUTOMOTIVE GRADE

AUIRFS3306

HEXFET^®Power MOSFET

Features

V_DSS

60V

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

R_DS(on)typ.

max.

3.3m

4.2m

160A

120A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating. These features

combine to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

D²Pak

AUIRFS3004

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

800

AUIRFS3306

AUIRFS3306TRL

AUIRFS3306

D²-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Max.

160

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

110

120

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

620

230

1.5

P_D@T_C= 25°C

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 20

184

I_AR

Avalanche Current 

See Fig.14,15, 22a, 22b

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery 

V/ns

-55 to + 175

300

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

T_STG

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case 

–––

0.65

R_JC

R_JA

°C/W

Junction-to-Ambient (PCB Mount) 

–––

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2017-10-11

12 3 4 5 6 7...10

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AUIRFS3306TRL 替代型号

型号	品牌	替代类型	描述	数据表
IRFS7537PBF	INFINEON	类似代替	Brushed Motor drive applications
IRFS3306TRLPBF	INFINEON	类似代替	High Efficiency Synchronous Rectification in SMPS
IRFS3306PBF	INFINEON	类似代替	High Efficiency Synchronous Rectification in SMPS

与AUIRFS3306TRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFS3307Z	INFINEON	获取价格	Advanced Process Technology
AUIRFS3307ZTRL	INFINEON	获取价格	Advanced Process Technology
AUIRFS3307ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRFS3607	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
AUIRFS3607TRL	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
AUIRFS3607TRR	INFINEON	获取价格	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
AUIRFS3806	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFS3806TRL	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFS3806TRR	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Me
AUIRFS4010	INFINEON	获取价格	Automotive applications

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