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AUIRFS3006-7TRR

更新时间： 2024-01-13 02:50:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 251K
描述
HEXFETPower MOSFET

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中文翻译

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AUIRFS3006-7TRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.67
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：303 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：240 A
最大漏极电流 (ID)：240 A最大漏源导通电阻：0.0021 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263CB
JESD-30 代码：R-PSSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：375 W最大脉冲漏极电流 (IDM)：1172 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON

AUIRFS3006-7TRR 数据手册

 浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第2页浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第3页浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第4页浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第5页浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第6页浏览型号AUIRFS3006-7TRR的Datasheet PDF文件第7页 
PD - 97714A  
AUTOMOTIVE GRADE  
AUIRFS3006-7P  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
●
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
VDSS  
60V  
1.5m  
2.1m  
293A  
240A  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
S
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating . These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
D
S
S
S
S
S
applications and a wide variety of other applications.  
G
D2Pak 7 Pin  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
293  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
207  
240  
1172  
PD @TC = 25°C  
375  
W
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
303  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
11  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.4  
Units  
RJC  
Junction-to-Case  
°C/W  
RJA  
–––  
40  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
12/2/11  
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中文翻译

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