Datasheet > ARF300_10

ARF300_10

更新时间： 2024-09-21 12:20:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	127K
描述
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ARF300_10 数据手册

ARF300

125V, 300W, 45MHz

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

TheARF300 is a N-CHANNELRF power transistor in a high efﬁciency ﬂangeless package.

It is designed for high voltage operation in narrow band ISM and MRI power ampliﬁers at

frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF

power transistor making the pair well suited for bridge conﬁgurations

• Speciﬁed 125 Volt, 27 MHz Characteristics:

Output Power = 300 Watts.

Gain = 15dB (Class E)

• High Performance

• High Voltage Breakdown and Large SOA

for Superior Ruggedness

Efﬁciency = 80%

• Low Thermal Resistance.

• RoHS Compliant

• Capacitance matched with ARF301 P-Channel

Maximum Ratings

All Ratings: T_C=25°C unless otherwise speciﬁed

Symbol

Parameter

Ratings

500

Unit

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

500

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

1000

-55 to 175

300

T_J, T_STG

T_L

°C

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 μA)

On State Drain Voltage ¹(I_D(ON)= 12A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 50V_DSS, V_GS= 0, T_C= 125°C)

Gate-Source Leakage Current (V_DS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 15V, I_D= 12A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 10mA)

500

V_DS(ON)

I_DSS

μA

250

±100

I_GSS

g_fs

mhos

Volts

V_GS(TH)

2.5

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

0.15

0.27

Unit

R_θJC

Junction to Case

°C/W

R_θJHS

Junction to Sink (High Efﬁciency Thermal Joint Compound and Planar Heat Sink Surface.)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4

中文翻译

下载PDF

与ARF300_10相关器件

型号	品牌	获取价格	描述	数据表
ARF301	MICROSEMI	获取价格	RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE
ARF32	ETC	获取价格	ARF32 BluetoothÂ® Modules User Guide
ARF322	POSEICO	获取价格	FAST RECOVERY DIODE
ARF322S16	POSEICO	获取价格	FAST RECOVERY DIODE
ARF340	POSEICO	获取价格	FAST RECOVERY DIODE
ARF340S26	POSEICO	获取价格	FAST RECOVERY DIODE
ARF360	POSEICO	获取价格	FAST RECOVERY DIODE
ARF360S33	POSEICO	获取价格	FAST RECOVERY DIODE
ARF370	POSEICO	获取价格	FAST RECOVERY DIODE
ARF370S45	POSEICO	获取价格	FAST RECOVERY DIODE