ARF443

更新时间： 2024-01-15 21:51:36

品牌	Logo	应用领域
ADPOW		晶体晶体管功率场效应晶体管放大器局域网
页数	文件大小	规格书
4页	59K
描述
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

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技术参数
数据手册

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ARF443 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	167 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

ARF443 数据手册

TO-247

ARF442 200W 100V 13.56MHz

ARF443 200W 100V 13.56MHz

THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.

POWER MOS IV^®

(

)

RF OPERATION 1-15MHz

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

commercial, medical and industrial RF power amplifier applications.

• Specified 100 Volt, 13.56 MHz Characteristics: • Low Cost Common Source RF Package.

• Output Power = 200 Watts.

• Gain = 22dB (Typ.)

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Efficiency = 73% (Typ.)

• Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF442/443

300

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Volts

Drain-Gate Voltage

300

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

Amps

Volts

Watts

°C/W

V_GS

±30

P_D

Total Power Dissipation @ T_C= 25°C

Junction to Case

167

R_θJC

T_J,T_STG

T_L

0.75

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

300

Volts

V_DS(ON)

On State Drain Voltage (I_D(ON) = 6.5A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 10V, I_D= 5.5A)

250

I_DSS

µA

1000

±100

I_GSS

g_fs

3.5

4.5

mhos

Volts

V_GS(TH)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

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