Datasheet > ARF446_03

ARF446_03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
4页	405K
描述
N-CHANNEL ENHANCEMENT MODE

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ARF446_03 数据手册

ARF446

ARF447

TO-247

Common

Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE

250V 140W 65MHz

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull

scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Low Cost Common Source RF Package.

Specified 250 Volt, 40.68 MHz Characteristics:

Very High Breakdown for Improved Ruggedness.

Output Power = 140 Watts.

Gain = 15dB (Class C)

Efficiency = 75%

Low Thermal Resistance.

Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

ARF446/447

900

UNIT

V_DSS

V_DGO

I_D

Drain-Source Voltage

Volts

Drain-Gate Voltage

900

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

6.5

Amps

Volts

Watts

°C/W

V_GS

P_D

Total Power Dissipation @ T_C= 25°C

Junction to Case

230

R_θJC

T_J,T_STG

T_L

0.55

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

UNIT

Symbol

BV_DSS

MIN

TYP

MAX

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

900

Volts

V_DS(ON)

On State Drain Voltage (I_D(ON) = 3.5A, V_GS= 10V)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= 30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 3.5A)

I_DSS

µA

250

100

I_GSS

g_fs

5.7

mhos

Volts

V_GS(TH)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

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与ARF446_03相关器件

型号	品牌	描述	获取价格	数据表
ARF446G	MICROSEMI	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE	获取价格
ARF447	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF447G	MICROSEMI	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE	获取价格
ARF448	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF448A	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF448A_03	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF448AG	MICROSEMI	RF Power Field-Effect Transistor	获取价格
ARF448B	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF448BG	MICROSEMI	RF Power Field-Effect Transistor	获取价格
ARF449A	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF449A	MICROSEMI	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel,	获取价格
ARF449B	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF449B	MICROSEMI	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel,	获取价格
ARF449BG	MICROSEMI	RF Power Field-Effect Transistor	获取价格
ARF450	ADPOW	N-CHANNEL ENHANCEMENT MODE	获取价格
ARF460A	ADPOW	N-CHANNEL ENHANCEMENT MODE POWER MOSFETs	获取价格
ARF460A	MICROSEMI	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE	获取价格
ARF460AG	MICROSEMI	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE	获取价格
ARF460B	MICROSEMI	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE	获取价格
ARF460B	ADPOW	N-CHANNEL ENHANCEMENT MODE POWER MOSFETs	获取价格

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