APTGT30H60T1G

更新时间： 2024-11-15 06:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		电源电路双极性晶体管
页数	文件大小	规格书
5页	277K
描述
Full - Bridge Trench + Field Stop IGBT® Power Module

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中文翻译

获取价格

数据手册

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APTGT30H60T1G 数据手册

APTGT30H60T1G

Full - Bridge

Trench + Field Stop IGBT^®

Power Module

V_CES= 600V

I_C= 30A @ Tc = 80°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features

•

Trench + Field Stop IGBT^®Technology

Low voltage drop

CR2 CR4

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

•

Very low stray inductance

NTC

Symmetrical design

•

Internal thermistor for temperature monitoring

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

RoHS Compliant

•

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

±20

T_C= 25°C

T_J= 150°C

Maximum Power Dissipation

RBSOA Reverse Bias Safe Operating Area

60A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 5

www.microsemi.com

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中文翻译

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