Datasheet > APTGT30H60T1G-Module

APTGT30H60T1G-Module

更新时间： 2024-11-06 14:55:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	448K
描述
Configuration: Full bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 30Silicon type: TRENCH 3 IGBT Package: SP1

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APTGT30H60T1G-Module 数据手册

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APTGT30H60T1G

Full - Bridge

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 30A @ Tc = 80°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features



Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

CR2 CR4

Low leakage current

RBSOA and SCSOA rated



Very low stray inductance

Symmetrical design

NTC



Internal thermistor for temperature monitoring

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

RoHS Compliant



Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

T_C= 25°C

T_C= 80°C

T_C= 25°C

±20

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_J= 150°C

RBSOA Reverse Bias Safe Operating Area

60A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 6

www.microsemi.com

12 3 4 5 6

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