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APTGT30H60T1G-Module PDF预览

APTGT30H60T1G-Module

更新时间: 2024-11-21 14:55:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 448K
描述
Configuration: Full bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 30Silicon type: TRENCH 3 IGBT Package: SP1

APTGT30H60T1G-Module 数据手册

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APTGT30H60T1G  
Full - Bridge  
Trench + Field Stop IGBT3  
Power Module  
VCES = 600V  
IC = 30A @ Tc = 80°C  
Application  
3
4
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q3  
Q1  
Q2  
CR1  
6
CR3  
1
2
9
5
7
Features  
Trench + Field Stop IGBT3 Technology  
Q4  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
CR2 CR4  
Low leakage current  
RBSOA and SCSOA rated  
8
10  
Very low stray inductance  
Symmetrical design  
12  
NTC  
11  
-
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
Each leg can be easily paralleled to achieve a phase  
leg of twice the current capability  
RoHS Compliant  
Pins 3/4 must be shorted together  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
V
VCES  
Collector - Emitter Breakdown Voltage  
600  
TC = 25°C  
TC = 80°C  
TC = 25°C  
50  
30  
60  
±20  
90  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
TJ = 150°C  
RBSOA Reverse Bias Safe Operating Area  
60A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 6  
www.microsemi.com  

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