Datasheet > APTGT35H120T3G-Module

APTGT35H120T3G-Module

更新时间： 2024-09-29 14:54:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	317K
描述
Configuration: Full bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 35Silicon type: TRENCH 3 IGBT Package: SP3F

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGT35H120T3G-Module 数据手册

浏览型号APTGT35H120T3G-Module的Datasheet PDF文件第2页

浏览型号APTGT35H120T3G-Module的Datasheet PDF文件第3页

浏览型号APTGT35H120T3G-Module的Datasheet PDF文件第4页

APTGT35H120T3G

Full - Bridge

Fast Trench + Field Stop IGBT3

Power Module

V_CES= 1200V

I_C= 35A @ Tc = 80°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Fast Trench + Field Stop IGBT3

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

Low stray inductance

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Easy paralleling due to positive TC of VCEsat

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

RoHS Compliant

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …



All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Voltage

1200

±20

208

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operating Area

70A@1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGT35H120T3G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGT35SK120D1	ADPOW	获取价格	Buck chopper Trench IGBT Power Module
APTGT35SK120D1G	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
APTGT35X120BTP3	ADPOW	获取价格	Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120BTP3G	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
APTGT35X120RTP3	ADPOW	获取价格	Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module
APTGT35X120RTP3G	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
APTGT35X120T3G	MICROSEMI	获取价格	3 Phase bridge Trench + Field Stop IGBT® Powe
APTGT35X120T3G-Module	MICROCHIP	获取价格	Configuration: Three Phase bridgeVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 35Silico
APTGT400A120	ADPOW	获取价格	Phase leg Fast Trench + Field Stop IGBT Power Module
APTGT400A120D3G	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module