Datasheet > APTGT400A120G-Module

APTGT400A120G-Module

更新时间： 2024-11-16 14:53:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	428K
描述
Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 400Silicon type: TRENCH 3 IGBT Package: SP6C

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGT400A120G-Module 数据手册

浏览型号APTGT400A120G-Module的Datasheet PDF文件第2页

浏览型号APTGT400A120G-Module的Datasheet PDF文件第3页

浏览型号APTGT400A120G-Module的Datasheet PDF文件第4页

APTGT400A120G

Phase leg

Fast Trench + Field Stop IGBT3

Power Module

V_CES= 1200V

I_C= 400A @ Tc = 80°C

Application



Welding converters

VBUS

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

OUT

Features



Fast Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

0/VBUS



Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

560 *

400

800

±20

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

1785

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 800A @ 1100V

* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature

greater than 100°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGT400A120G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGT400A60D3G	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT400A60D3G_11	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT3 Power Module
APTGT400A60D3G-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 400Silicon type: T
APTGT400DA120D3G	MICROSEMI	获取价格	Boost chopper Trench + Field Stop IGBT Power Module
APTGT400DA120G	MICROSEMI	获取价格	Boost chopper Fast Trench + Field Stop IGBT Power Module
APTGT400DA120G-Module	MICROCHIP	获取价格	Configuration: Boost chopperVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 400Silicon ty
APTGT400DA60D3G	MICROSEMI	获取价格	Boost chopper Trench + Field Stop IGBT Power Module
APTGT400DA60D3G_11	MICROSEMI	获取价格	Boost chopper Trench + Field Stop IGBT3 Power Module
APTGT400DA60D3G-Module	MICROCHIP	获取价格	Configuration: Boost chopperVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 400Silicon typ
APTGT400DU120	ADPOW	获取价格	Dual common source Fast Trench + Field Stop IGBT Power Module