5秒后页面跳转
APTGT400U170D4G-Module PDF预览

APTGT400U170D4G-Module

更新时间: 2024-11-21 14:55:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 587K
描述
Configuration: Single switchVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 400Silicon type: TRENCH 3 IGBT Package: D4

APTGT400U170D4G-Module 数据手册

 浏览型号APTGT400U170D4G-Module的Datasheet PDF文件第2页浏览型号APTGT400U170D4G-Module的Datasheet PDF文件第3页浏览型号APTGT400U170D4G-Module的Datasheet PDF文件第4页浏览型号APTGT400U170D4G-Module的Datasheet PDF文件第5页浏览型号APTGT400U170D4G-Module的Datasheet PDF文件第6页 
APTGT400U170D4G  
Single switch  
Trench + Field Stop IGBT3  
Power Module  
VCES = 1700V  
IC = 400A @ Tc = 80°C  
Application  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
1
3
Features  
Trench + Field Stop IGBT3 Technology  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
5
2
Low leakage current  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
M6 connectors for power  
M4 connectors for signal  
High level of integration  
Benefits  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1700  
800  
400  
800  
±20  
2080  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
Tj = 125°C  
RBSOA Reverse Bias Safe Operating Area  
800A@1650V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

与APTGT400U170D4G-Module相关器件

型号 品牌 获取价格 描述 数据表
APTGT450A60 ADPOW

获取价格

Phase leg Trench + Field Stop IGBT Power Module
APTGT450A60G MICROSEMI

获取价格

Phase leg Trench + Field Stop IGBT Power Module
APTGT450A60G-Module MICROCHIP

获取价格

Configuration: Phase legVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 450Silicon type: T
APTGT450DA60G MICROSEMI

获取价格

Boost chopper Trench + Field Stop IGBT Power Module
APTGT450DA60G-Module MICROCHIP

获取价格

Configuration: Boost chopperVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 450Silicon typ
APTGT450DU60 ADPOW

获取价格

Dual common source Trench + Field Stop IGBT Power Module
APTGT450DU60G MICROSEMI

获取价格

Dual common source Trench + Field Stop IGBT Power Module
APTGT450SK60 ADPOW

获取价格

Buck chopper Trench + Field Stop IGBT Power Module
APTGT450SK60 MICROSEMI

获取价格

Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, MODULE-5
APTGT450SK60G MICROSEMI

获取价格

Buck chopper Trench + Field Stop IGBT Power Module