Datasheet > 晶体管 > IGBT> APTGT400U170D4G

APTGT400U170D4G

更新时间： 2024-11-15 04:49:39

品牌	Logo	应用领域
ADPOW		晶体开关晶体管双极性晶体管
页数	文件大小	规格书
5页	267K
描述
Single switch Trench + Field Stop IGBT Power Module

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中文翻译

获取价格

技术参数
数据手册

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APTGT400U170D4G 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Is Samacsys：	N	Base Number Matches：	1

APTGT400U170D4G 数据手册

APTGT400U170D4G

Single switch

Trench + Field Stop IGBT^®

Power Module

V_CES= 1700V

I_C= 400A @ Tc = 80°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Trench + Field Stop IGBT^®Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Low stray inductance

High level of integration

Kelvin emitter for easy drive

Low stray inductance

M6 connectors for power

M4 connectors for signal

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1700

800

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

400

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

800

±20

2080

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operation Area

800A@1650V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

1 - 5

APT website – http://www.advancedpower.com

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中文翻译

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与APTGT400U170D4G相关器件

型号	品牌	获取价格	描述	数据表
APTGT400U170D4G-Module	MICROCHIP	获取价格	Configuration: Single switchVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 400Silicon type
APTGT450A60	ADPOW	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT450A60G	MICROSEMI	获取价格	Phase leg Trench + Field Stop IGBT Power Module
APTGT450A60G-Module	MICROCHIP	获取价格	Configuration: Phase legVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 450Silicon type: T
APTGT450DA60G	MICROSEMI	获取价格	Boost chopper Trench + Field Stop IGBT Power Module
APTGT450DA60G-Module	MICROCHIP	获取价格	Configuration: Boost chopperVCES (V): 600VCESat (V): 1.4Current (A) Tc=80C: 450Silicon typ
APTGT450DU60	ADPOW	获取价格	Dual common source Trench + Field Stop IGBT Power Module
APTGT450DU60G	MICROSEMI	获取价格	Dual common source Trench + Field Stop IGBT Power Module
APTGT450SK60	ADPOW	获取价格	Buck chopper Trench + Field Stop IGBT Power Module
APTGT450SK60	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, MODULE-5