Datasheet > APTGT400DA120G

APTGT400DA120G

更新时间： 2024-11-15 04:49:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
5页	246K
描述
Boost chopper Fast Trench + Field Stop IGBT Power Module

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中文翻译

获取价格

数据手册

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APTGT400DA120G 数据手册

APTGT400DA120G

Boost chopper

Fast Trench + Field Stop IGBT^®

Power Module

V_CES= 1200V

I_C= 400A @ Tc = 80°C

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

VBUS

CR1

Features

•

Fast Trench + Field Stop IGBT^®Technology

OUT

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

0/VBUS

•

Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors

•

High level of integration

VBUS

0/VBUS

OUT

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

560 *

400

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

800

±20

T_C= 25°C

1785

RBSOA Reverse Bias Safe Operating Area

T_j= 125°C 800A @ 1100V

* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature

greater than 100°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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