Datasheet > APTGT30TL601G-Module

APTGT30TL601G-Module

更新时间： 2024-09-29 14:52:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
8页	484K
描述
Configuration: Three level inverterVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 30Silicon type: TRENCH 3 IGBT Package: SP1

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APTGT30TL601G

Three level inverter

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 30A @ Tc = 80°C

Application



Solar converter

Uninterruptible Power Supplies

Features



Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated



Very low stray inductance

High level of integration

Benefits



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

All multiple inputs and outputs must be shorted together

5/6 ; 9/10

Q1 to Q4 Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

T_C= 25°C

T_C= 80°C

T_C= 25°C

±20

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_J= 150°C

RBSOA Reverse Bias Safe Operating Area

60A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 - 8

www.microsemi.com

12 3 4 5 6 7 8

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