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APT40N60LCFE3 PDF预览

APT40N60LCFE3

更新时间： 2024-01-22 19:53:49
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网脉冲晶体管
页数 文件大小 规格书
5页 314K
描述
Power Field-Effect Transistor, 40A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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APT40N60LCFE3 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：compliant风险等级：5.65
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：690 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (ID)：40 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-264AA
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：80 A表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

APT40N60LCFE3 数据手册

 浏览型号APT40N60LCFE3的Datasheet PDF文件第2页浏览型号APT40N60LCFE3的Datasheet PDF文件第3页浏览型号APT40N60LCFE3的Datasheet PDF文件第4页浏览型号APT40N60LCFE3的Datasheet PDF文件第5页 
600V 40A 0.110Ω  
APT40N60B2CF  
APT40N60LCF  
APT40N60B2CFG* APT40N60LCFG*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Super Junction FREDFET  
COOLMOS  
T-MaxTM  
Power Semiconductors  
TO-264  
• Ultra Low R  
DS(ON)  
• Intrinsic Fast-Recovery Body Diode  
• Extreme Low Reverse Recovery Charge  
• Ideal For ZVS Applications  
• Low Miller Capacitance  
• Ultra Low Gate Charge, Q  
• Avalanche Energy Rated  
g
• Popular T-MAX™ or TO-264 Package  
dv  
• Extreme  
/
Rated  
dt  
D
S
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two  
parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.  
G
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Symbol Parameter  
APT40N60B2CF(G)_LCF(G)  
UNIT  
VDSS  
Volts  
Drain-Source Voltage  
600  
40  
Continuous Drain Current @ TC = 25°C  
Continuous Drain Current @ TC = 100°C  
ID  
Amps  
26  
1
IDM  
Pulsed Drain Current  
80  
VGS  
Volts  
Watts  
W/°C  
Gate-Source Voltage Continuous  
±30  
417  
Total Power Dissipation @ TC = 25°C  
PD  
Linear Derating Factor  
3.33  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)  
-55 to 150  
260  
°C  
dv  
/
V/ns  
80  
20  
1
dt  
7
IAR  
EAR  
EAS  
Avalanche Current  
Amps  
7
Repetitive Avalanche Energy  
mJ  
4
690  
Single Pulse Avalanche Energy  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)  
Volts  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 20A)  
0.110 Ohms  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)  
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2mA)  
4.2  
µA  
3400  
IDSS  
IGSS  
nA  
±100  
5
VGS(th)  
3
4
Volts  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-  
mark of Infineon Technologies AG."  
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