APT41H50B
APT41H50S
500V, 41A, 0.15Ω Max, t , ≤215ns
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N-Channel Ultrafast Recovery FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
D3PAK
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
t , soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
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a greatly reduced ratio of C /C result in excellent noise immunity and low switching
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APT41H50B
APT41H50S
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
D
S
Single die FREDFET
G
TYPICAL APPLICATIONS
FEATURES
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• UPS
• Very Low t for maximum reliability
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• Ultra low C
for improved noise immunity
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• Welding
• Low gate charge
• Solar inverters
• Telecom rectifiers
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
41
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
26
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
135
±30
930
21
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
625
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
0.20
Junction to Case Thermal Resistance
°C/W
°C
RθCS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
TJ,TSTG
TL
-55
150
300
oz
g
0.22
6.2
WT
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com