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APT25GN120BE3 PDF预览

APT25GN120BE3

更新时间： 2024-11-13 14:47:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网栅功率控制晶体管
页数 文件大小 规格书
6页 197K
描述
Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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APT25GN120BE3 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：compliant风险等级：5.58
其他特性：HIGH RELIABILITY外壳连接：COLLECTOR
最大集电极电流 (IC)：67 A集电极-发射极最大电压：1200 V
配置：SINGLEJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：560 ns标称接通时间 (ton)：39 ns
Base Number Matches：1

APT25GN120BE3 数据手册

 浏览型号APT25GN120BE3的Datasheet PDF文件第2页浏览型号APT25GN120BE3的Datasheet PDF文件第3页浏览型号APT25GN120BE3的Datasheet PDF文件第4页浏览型号APT25GN120BE3的Datasheet PDF文件第5页浏览型号APT25GN120BE3的Datasheet PDF文件第6页 
1200V  
APT25GN120B  
APT25GN120S  
APT25GN120BG* APT25GN120SG*  
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra  
low VCE(ON) and are ideal for low frequency applications that require absolute minimum  
conduction loss. Easy paralleling is a result of very tight parameter distribution and  
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures  
extremely reliable operation, even in the event of a short circuit fault. Low gate charge  
simplifies gate drive design and minimizes losses.  
(B)  
D3PAK  
(S)  
C
E
G
G
C
E
• 1200V Field Stop  
• Trench Gate: Low VCE(on)  
• Easy Paralleling  
• Integrated Gate Resistor: Low EMI, High Reliability  
C
E
G
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
APT25GN120B(G)  
UNIT  
VCES  
Collector-Emitter Voltage  
1200  
Volts  
VGE  
IC1  
Gate-Emitter Voltage  
±30  
67  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 110°C  
IC2  
33  
Amps  
1
Pulsed Collector Current  
ICM  
75  
Switching Safe Operating Area @ TJ = 150°C  
75A @ 1200V  
272  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
TL  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
Units  
V(BR)CES  
1200  
5
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 150µA)  
VGE(TH)  
5.8  
1.7  
1.9  
6.5  
2.1  
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)  
Volts  
1.4  
VCE(ON)  
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)  
100  
TBD  
600  
ICES  
µA  
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
Integrated Gate Resistor  
IGES  
nA  
RG(int)  
8
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
123456

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