Datasheet > APT25GP120B2D1

APT25GP120B2D1

更新时间： 2024-11-21 15:41:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管功率控制
页数	文件大小	规格书
2页	523K
描述
36A, 1200V, N-CHANNEL IGBT, TMAX-3

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中文翻译

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技术参数
数据手册

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APT25GP120B2D1 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PSIP-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	36 A
集电极-发射极最大电压：	1200 V	配置：	SINGLE WITH BUILT-IN DIODE
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	Base Number Matches：	1

APT25GP120B2D1 数据手册

Product Profile

Advanced Power Technology

New Power MOS 7^®IGBTs for SMPS Applications

600 Volt Size 6 - APT40GP60B2D1

Product Description

IGBT products offered by APT utilize both NPT and PT technologies to cover

the widest range of applications and design requirements. They can be used as

a cost effective alternative to MOSFETs in many applications with high efficiency,

improved power density, and lower cost. Recently, APT has announced a new

generation of 600 and 1200 volt PT-Type IGBTs utilizing its advanced proprietary

Power MOS 7® Technology. The 600 volt IGBTs are designed to replace 500 and

600 volt MOSFETs and the 1200 volt IGBTs are designed to replace 1000 and

1200 volt MOSFETs in switch mode power supply (SMPS), power factor correc-

tion (PFC), and other high-power applications. The gate-drive voltage require-

ment is similar to a MOSFET. This allows larger die size power MOSFETs, or

multiple MOSFETs in parallel to be replaced with just one power MOS 7® IGBT.

This new generation technology enables operation up to 150 kHz without current

de-rating. Products range from approximately 10 to 100 amps in TO-220, TO-

TJ=125^OC

TC=75^OC

D=50%

VCE=400V

RG=5W

_CCollector Current (A)

247, T-MAX , TO-264, 264 MAX , and Isotop® packages.

1200 Volt Size 6 - APT35GP120B2D2

Higher Threshold Voltage and Re-

duced Miller Capacitance - this pro-

vides for increased noise and spurious

turn-on immunity and eliminates the

need for a negative gate voltage for

turn-off. This eliminates the need for an

auxiliary power supply and simplifies the

use of gate driver ICs.

TJ=125^OC

TC=75^OC

D=50%

Low Forward Voltage - conduction

losses are dramatically lower, especially

at high temperatures.

VCE=800V

RG=5W

Low Gate Charge this reduces gate

drive power losses and enables fast

switching.

_CCollector Current (A)

Hermetic and Hi-Rel

Features and Benefits

Low Thermal Resistance maximiz-

ing power dissipation capabilities.

APT is ISO9001 registered, MIL-PRF-

19500 certified, and can offer TX, TXV,

and space level processing. Custom test-

ing and screening as well as plastic up-

screening is also available.

Metal Gate - these IGBTs utilize a pro-

prietary planar stripe metal gate design

providing internal chip gate resistance one

to two orders of magnitude lower than

comparable industry standard polysilicon

gate devices. This enables very uniform

and fast switching across the entire chip

with uniform heat distribution. The metal

gate minimizes chip gate resistance varia-

tion from batch to batch providing the user

with more consistent switching perfor-

mance. In addition, the low chip gate re-

sistance allows the designer maximum

range of switching speed and increases

the immunity to dv/dt induced turn-on.

Combis - Power MOS 7® IGBTs are

available co-packaged with a fast-recov-

ery, antiparallel diode optimized for low

reverse recovery charge, further en-

hancing performance in power switch-

ing applications. Co-packaging the

Power MOS 7® IGBTs with these rectifi-

ers reduces EMI, switching losses, and

conduction losses, while reducing com-

ponent count and cost.

Power Modules

Products cover a wide range of power

and complexity.

Low Switching Energies this enables

very low inductive switching losses. In

combination with the low conduction

losses and the low thermal resistance,

new levels of high frequency capability

for a given current is achieved.

Die Products - are available.

Lower Cost

Alternative

to MOSFETS

www.advancedpower.com

Nasdaq: APTI

Data sheets now include a graph of fre-

quency vs. current for an IGBT Combi.

This graph comprehends both conduc-

tion and switching losses and allows the

designer to properly select the best de-

vice for the application. Examples are

shown in the following graphs:

High Current Density the IGBT ad-

vantage in current density over MOSFETs

facilitates higher output power, provides

for smaller and lower cost components,

and allows for smaller and higher power

density designs. The die size for the IGBT

is often 1 or 2 die sizes smaller than a

MOSFET solution.

Switching Power (541) 382-8028 USA

Power Modules

RF Power

33 337 92 1515 France

(408) 986-8031 USA

中文翻译

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与APT25GP120B2D1相关器件

型号	品牌	获取价格	描述	数据表
APT25GP120BD1	ETC	获取价格	Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps\|Ultrafast IGBT Family
APT25GP120BDF1	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel
APT25GP120BDQ1	ADPOW	获取价格	POWER MOS 7 IGBT
APT25GP120BDQ1G	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT25GP120BDQ1G	ADPOW	获取价格	POWER MOS 7 IGBT
APT25GP120BG	MICROSEMI	获取价格	Power Semiconductors Power Modules
APT25GP90B	ADPOW	获取价格	POWER MOS 7 IGBT
APT25GP90BDF1	ADPOW	获取价格	POWER MOS 7 IGBT
APT25GP90BDQ1	ADPOW	获取价格	POWER MOS 7 IGBT
APT25GP90BDQ1G	ADPOW	获取价格	POWER MOS 7 IGBT

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