APT25GP120BD1
1200V
®
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7® IGBT provides a lower cost alternative to a Power
TO-247
G
C
MOSFET.
E
C
E
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 800V,11A
• 50 kHz operation @ 800V, 20A
• RBSOA Rated
G
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT25GP120BD1
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
75
36
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
144
Pulsed Collector Current
@ TC = 25°C
RBSOA
PD
Reverse Bias Safe Operating Area @ TJ = 150°C
144
462
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 400µA)
1200
3
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
4.5
3.6
3.1
6
Volts
3.9
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
400
3000
±100
µA
nA
ICES
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com