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APT25GP120BD1 PDF预览

APT25GP120BD1

更新时间: 2024-09-24 23:30:59
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页数 文件大小 规格书
7页 91K
描述
Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family

APT25GP120BD1 数据手册

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APT25GP120BD1  
1200V  
®
POWER MOS 7 IGBT  
A new generation of high voltage power IGBTs. Using punch-through  
technology and a proprietary metal gate, this IGBT has been optimized for  
very fast switching, making it ideal for high frequency, high voltage switch-  
mode power supplies and tail current sensitive applications. In many cases,  
the POWER MOS 7® IGBT provides a lower cost alternative to a Power  
TO-247  
G
C
MOSFET.  
E
C
E
• Low Conduction Loss  
• Low Gate Charge  
• 100 kHz operation @ 800V,11A  
• 50 kHz operation @ 800V, 20A  
• RBSOA Rated  
G
• Ultrafast Tail Current shutoff  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
UNIT  
Symbol  
VCES  
VGE  
APT25GP120BD1  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
1200  
±20  
±30  
Volts  
VGEM  
IC1  
Gate-Emitter Voltage Transient  
75  
36  
Continuous Collector Current @ TC = 25°C  
Amps  
IC2  
Continuous Collector Current @ TC = 110°C  
1
ICM  
144  
Pulsed Collector Current  
@ TC = 25°C  
RBSOA  
PD  
Reverse Bias Safe Operating Area @ TJ = 150°C  
144  
462  
Watts  
°C  
Total Power Dissipation  
TJ,TSTG  
TL  
-55 to 150  
300  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 400µA)  
1200  
3
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)  
4.5  
3.6  
3.1  
6
Volts  
3.9  
VCE(ON)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
400  
3000  
±100  
µA  
nA  
ICES  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
IGES  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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